Hangzhou Freqcontrol Electronic Technology Ltd.
Hangzhou Freqcontrol Electronic Technology Ltd. We Grow Crystal. We Fabricate Wafer. We are Piezoelectric Specialist.
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3 Inch Dia 76.2mm Sapphire Substrate Optical Crystal Windows
Single crystal sapphire Al2O3 possesses a unique combination of excellent optical, physical and chemical properties. The hardest of the oxide crystals, sapphire Al2O3 retains its high strength at high temperatures, has good thermal properties and excellent transparency. Sapphire Al2O3 optics is chemically resistant to many acids and alkalis at temperatures up to 1000 degrees C as well as to HF below 300 degrees C. These properties encourage its wide use of Sapphire Al2O3 optics in hostile environments where optical transmission in the range from the visible to the near infrared is required.
| Item | 3-inch C-plane(0001) 650μm Sapphire Wafers | |
| Crystal Materials | 99,999%, High Purity, Monocrystalline Al2O3 | |
| Grade | Prime, Epi-Ready | |
| Surface Orientation | C-plane(0001) | |
| C-plane off-angle toward M-axis 0.2 +/- 0.1° | ||
| Diameter | 76.2 mm +/- 0.1 mm | |
| Thickness | 650 μm +/- 25 μm | |
| Primary Flat Orientation | A-plane(11-20) +/- 0.2° | |
| Primary Flat Length | 22.0 mm +/- 1.0 mm | |
| Single Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
| (SSP) | Back Surface | Fine ground, Ra = 0.8 μm to 1.2 μm |
| Double Side Polished | Front Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
| (DSP) | Back Surface | Epi-polished, Ra < 0.2 nm (by AFM) |
| TTV | < 20 μm | |
| BOW | < 20 μm | |
| WARP | < 20 μm | |
| Cleaning / Packaging | Class 100 cleanroom cleaning and vacuum packaging, single piece packaging. | |
| PHYSICAL PROPERTIES of SAPPHIRE Al2O3 | |
| Density | 3.97 g/cm3 |
| Melting Point | 2040 degrees C |
| Thermal Conductivity | 27.21 W/(m x K) at 300 K |
| Thermal Expansion | 5.6 x 10 -6 /K (parallel C-axis) & 5.0 (perpendicular C-axis) x 10 -6 /K |
| Hardness | Knoop 2000 kg/mm 2 with 2000g indenter |
| Specific Heat Capacity | 419 J/(kg x K) |
| Dielectric Constant | 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz |
| Young's Modulus (E) | 335 GPa |
| Shear Modulus (G) | 148.1 GPa |
| Bulk Modulus (K) | 240 GPa |
| Elastic Coefficients | C11=496 C12=164 C13=115 C33=498 C44=148 |
| Apparent Elastic Limit | 275 MPa (40,000 psi) |
| Poisson Ratio | 0.25 |
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