2 Inch Sapphire Crystal C Plane Polished Sapphire Wafers Sapphire Substrates
Specification:
Single crystal Al2O3 99.999％
Orientation: R-axis 0.5°
Diameter:50.8±0.1mm
Thickness :430±15um or 330±15um
Primary flat:16±1mm
OF Orientation flat: Off R to C axis 45°±0.1° C-plane(0001)
Frontside Surface Roughness:Ra＜0.2nm
Backside Surface Roughness: 0.8~1.2um ( Or double side polished, both side Ra＜0.2nm)
TTV:＜10um BOW:-10~0um WARP:＜10um
Laser Mark Series No. by needs
Package:Vacuum-sealed containers with nitrogen backfill in a class 100 environment
Cleanliness :Free visible contamination
1. Sapphire has a high optical transmittance, so it is widely used as microelectronic tube dielectric material, ultrasonic conduction element, waveguide laser cavity, and other optical elements, as window materials for infrared military devices, space vehicles, high-intensity lasers and optical communications.
2. Sapphire has high rigidity, high strength, high working temperature, abrasion resistance, corrosion resistance characteristics, so sapphire substrate is often used in harsh environments, such as boiler water gauge (high-temperature resistance), commodity bar code scanner, bearing, and other precision manufacturing (wear resistance), coal, gas, well detection sensors and detector windows (anti-corrosion).
3. Sapphire has the characteristics of electrical insulation, transparency, good thermal conductivity, and high rigidity, so it can be used as the substrate material of integrated circuits, such as LED and microelectronic circuits, ultra-high-speed integrated circuit.
| OPTICAL PROPERTIES of SAPPHIRE Al2O3 |
| Transmission Range | 0.17 to 5.5 microns |
| Refractive Index | 1.75449 (o) 1.74663 (e) at 1.06 microns |
| Reflection Loss | at 1.06 microns (2 surfaces) for o-ray - 11.7%; for e-ray - 14.2% |
| Index of Absorption | 0.3 x 10-3 cm-1 at 2.4 microns |
| dN/dT | 13.7 x 10-6 at 5.4 microns |
| dn/dm = 0 | 1.5 microns |
| PHYSICAL PROPERTIES of SAPPHIRE Al2O3 |
| Density | 3.97 g/cm3 |
| Melting Point | 2040 degrees C |
| Thermal Conductivity | 27.21 W/(m x K) at 300 K |
| Thermal Expansion | 5.6 x 10 -6 /K (parallel C-axis) & 5.0 (perpendicular C-axis) x 10 -6 /K |
| Hardness | Knoop 2000 kg/mm 2 with 2000g indenter |
| Specific Heat Capacity | 419 J/(kg x K) |
| Dielectric Constant | 11.5 (parallel C-axis) 9.4 (perpendicular C-axis) at 1MHz |
| Young's Modulus (E) | 335 GPa |
| Shear Modulus (G) | 148.1 GPa |
| Bulk Modulus (K) | 240 GPa |
| Elastic Coefficients | C11=496 C12=164 C13=115
C33=498 C44=148 |
| Apparent Elastic Limit | 275 MPa (40,000 psi) |
| Poisson Ratio | 0.25 |
Acceptance Check
